inchange semiconductor isc product specification isc silicon npn darlington power transistor 2SD2045 description collector-emitter breakdown voltage- : v (br)ceo = 120v(min) collector-emitter saturation voltage- : v ce(sat) = 1.5v(max) @i c = 3a high dc current gain : h fe = 2000(min) @ i c = 3a, v ce = 2v applications designed of driver of solenoid,motor and general purpose applications. absolute maximum ratings(t a =25 ) symbol parameter value unit v cbo collector-base voltage 120 v v ceo collector-emitter voltage 120 v v ebo emitter-base voltage 6 v i c collector current-continuous 6 a i cm collector current-peak 10 a i b b base current-continuous 1 a p c collector power dissipation @ t c =25 50 w t j junction temperature 150 t stg storage temperature range -55~150 isc website www.iscsemi.cn
inchange semiconductor isc product specification isc silicon npn darlington power transistor 2SD2045 electrical characteristics t c =25 unless otherwise specified symbol parameter conditions min typ. max unit v (br)ceo collector-emitter breakdown voltage i c = 10ma ; i b = 0 120 v v ce( sat ) collector-emitter saturation voltage i c = 3a; i b = 3ma b 1.5 v v be( sat ) base-emitter saturation voltage i c = 3a; i b = 3ma b 2.0 v i cbo collector cutoff current v cb = 120v; i e = 0 10 a i ebo emitter cutoff current v eb = 6v; i c = 0 10 ma h fe dc current gain i c = 3a; v ce = 2v 2000 f t current-gain?bandwidth product i e = -1a; v ce = 12v 50 mhz c ob output capacitance i e = 0; v cb = 10v,f test = 1mhz 70 pf switching times t on turn-on time 0.5 s t stg storage time 5.5 s t f fall time i c = 3a; i b1 = -i b2 = 3ma; r l = 10 ; v cc = 30v 1.5 s isc website www.iscsemi.cn 2
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